FQPF22P10 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
FQPF22P10
|
|
حجم فایل
|
830.086
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
10
|
مشخصات فنی
-
Manufacturer:
ON Semiconductor
-
Series:
QFET®
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
13.2A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
125mOhm @ 6.6A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
1500pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
45W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220F
-
Package / Case:
TO-220-3 Full Pack
-
Base Part Number:
FQPF2
-
detail:
P-Channel 100V 13.2A (Tc) 45W (Tc) Through Hole TO-220F
