دیتاشیت NDP6020P
مشخصات دیتاشیت
نام دیتاشیت | NDP6020P, NDB6020P |
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حجم فایل | 184.561 کیلوبایت |
نوع فایل | |
تعداد صفحات | 7 |
دانلود دیتاشیت NDP6020P, NDB6020P |
NDP6020P, NDB6020P Datasheet |
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مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi NDP6020P
- Power Dissipation (Pd): 60W
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 24A
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@4.5V,12A
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: NDP602
- detail: P-Channel 20V 24A (Tc) 60W (Tc) Through Hole TO-220-3