FQI4N90TU دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FQI4N90
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حجم فایل
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919.268
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
900V
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Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
3.3Ohm @ 2.1A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
3.13W (Ta), 140W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I2PAK (TO-262)
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Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
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Base Part Number:
FQI4
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detail:
N-Channel 900V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole I2PAK (TO-262)
