دیتاشیت FGH75T65UPD
مشخصات دیتاشیت
| نام دیتاشیت |
FGH75T65UPD
|
| حجم فایل |
58.246
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Type:
Trench Field Stop
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGH75T65UPD
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
150A
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Power Dissipation (Pd):
375W
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Turn?on Delay Time (Td(on)):
32ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
2.85mJ
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Total Gate Charge (Qg@Ic,Vge):
385nC
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Turn?off Delay Time (Td(off)):
166ns
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Pulsed Collector Current (Icm):
225A
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Turn?off Switching Loss (Eoff):
1.2mJ
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Diode Reverse Recovery Time (Trr):
85ns
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.3V@15V,75A
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Not For New Designs
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
150A
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Current - Collector Pulsed (Icm):
225A
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Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 75A
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Power - Max:
375W
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Switching Energy:
2.85mJ (on), 1.2mJ (off)
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Input Type:
Standard
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Gate Charge:
385nC
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Td (on/off) @ 25°C:
32ns/166ns
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Test Condition:
400V, 75A, 3Ohm, 15V
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Reverse Recovery Time (trr):
85ns
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247-3
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Base Part Number:
FGH75
