دیتاشیت IXFH80N65X2
مشخصات دیتاشیت
| نام دیتاشیت | IXFx80N65X2 Preliminary |
|---|---|
| حجم فایل | 905.125 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت IXFx80N65X2 Preliminary |
IXFx80N65X2 Preliminary Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Littelfuse/IXYS IXFH80N65X2
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 890W
- Total Gate Charge (Qg@Vgs): 143nC@10V
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): 8245pF@25V
- Continuous Drain Current (Id): 80A
- Gate Threshold Voltage (Vgs(th)@Id): 5.5V@4mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 38mΩ@10V,40A
- Package: TO-247-3
- Manufacturer: IXYS
- Series: HiPerFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
