دیتاشیت IXFX160N30T
مشخصات دیتاشیت
| نام دیتاشیت | IXF(K,X)160N30T |
|---|---|
| حجم فایل | 183.751 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت IXF(K,X)160N30T |
IXF(K,X)160N30T Datasheet |
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مشخصات
- Manufacturer: IXYS
- Series: GigaMOS™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 1390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3
- detail: N-Channel 300V 160A (Tc) 1390W (Tc) Through Hole PLUS247™-3
