STGF10NC60KD Datasheet

STGF10NC60KD

Datasheet specifications

Datasheet's name STGF10NC60KD
File size 65.745 KB
File type pdf
Number of pages 30

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Technical specifications

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: STMicroelectronics STGF10NC60KD
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 9A
  • Power Dissipation (Pd): 25W
  • Turn?on Delay Time (Td(on)): 17ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.055mJ
  • Total Gate Charge (Qg@Ic,Vge): 19nC
  • Turn?off Delay Time (Td(off)): 72ns
  • Pulsed Collector Current (Icm): 30A
  • Turn?off Switching Loss (Eoff): 0.085mJ
  • Diode Reverse Recovery Time (Trr): 22ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,5A
  • Package: TO-220FP-3
  • Manufacturer: STMicroelectronics
  • Series: PowerMESH™
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 25W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
  • Base Part Number: STGF10
  • detail: IGBT 600V 9A 25W Through Hole TO-220FP

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