دیتاشیت STGP19NC60KD
مشخصات دیتاشیت
| نام دیتاشیت |
STGx19NC60KD
|
| حجم فایل |
1361.963
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
26
|
مشخصات
-
RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
STMicroelectronics STGP19NC60KD
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
35A
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Power Dissipation (Pd):
125W
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
0.165mJ
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Pulsed Collector Current (Icm):
75A
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Turn?off Switching Loss (Eoff):
0.255mJ
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Diode Reverse Recovery Time (Trr):
31ns
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Collector-Emitter Breakdown Voltage (Vces):
600V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
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Package:
TO-220
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Manufacturer:
STMicroelectronics
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Series:
PowerMESH™
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
600V
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Current - Collector (Ic) (Max):
35A
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Current - Collector Pulsed (Icm):
75A
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Vce(on) (Max) @ Vge, Ic:
2.75V @ 15V, 12A
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Power - Max:
125W
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Switching Energy:
165µJ (on), 255µJ (off)
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Input Type:
Standard
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Gate Charge:
55nC
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Td (on/off) @ 25°C:
30ns/105ns
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Test Condition:
480V, 12A, 10Ohm, 15V
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Reverse Recovery Time (trr):
31ns
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220
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Base Part Number:
STGP19
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detail:
IGBT 600V 35A 125W Through Hole TO-220
