دیتاشیت STD5N60M2
مشخصات دیتاشیت
| نام دیتاشیت |
STx5N60M2
|
| حجم فایل |
553.684
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
27
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STD5N60M2
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Power Dissipation (Pd):
45W
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Total Gate Charge (Qg@Vgs):
8.5nC@10V
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Drain Source Voltage (Vdss):
600V
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Input Capacitance (Ciss@Vds):
211pF@100V
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Continuous Drain Current (Id):
3.5A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.4Ω@10V,1.7A
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Package:
TO-252
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Manufacturer:
STMicroelectronics
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Series:
MDmesh™ II Plus
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
1.4Ohm @ 1.7A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
8.5nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
211pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
45W (Tc)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
STD5N
