دیتاشیت TN0106N3-G
مشخصات دیتاشیت
نام دیتاشیت |
TN0106
|
حجم فایل |
616.478
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
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Manufacturer:
Microchip Technology
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Series:
-
-
Packaging:
Bulk
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
350mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
3Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
2V @ 500µA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
1W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-92-3
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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detail:
N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3