MPSH81, MMBTH81 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MPSH81, MMBTH81	دانلود دیتاشیت

MMBTH81 13 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MMBTH81
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 50mA
Power Dissipation (Pd): 225mW
Transition Frequency (fT): 600MHz
DC Current Gain (hFE@Ic,Vce): 60@50mA,10V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 20V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@5mA,500uA
Package: SOT-23(TO-236)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBTH81
detail: RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mount SOT-23-3 (TO-236)