دیتاشیت NDPL180N10BG
مشخصات دیتاشیت
| نام دیتاشیت |
NDPL180N10B
|
| حجم فایل |
684.076
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
180A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
10V, 15V
-
Rds On (Max) @ Id, Vgs:
3mOhm @ 15V, 50A
-
Vgs(th) (Max) @ Id:
4V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
95nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
6950pF @ 50V
-
FET Feature:
-
-
Power Dissipation (Max):
2.1W (Ta), 200W (Tc)
-
Operating Temperature:
175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220-3
-
Package / Case:
TO-220-3
-
Base Part Number:
NDPL18
-
detail:
N-Channel 100V 180A (Ta) 2.1W (Ta), 200W (Tc) Through Hole TO-220-3
