دیتاشیت IXFN420N10T
مشخصات دیتاشیت
نام دیتاشیت |
IXFN420N10T
|
حجم فایل |
181.933
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Littelfuse/IXYS IXFN420N10T
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
1.07kW
-
Total Gate Charge (Qg@Vgs):
670nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
47000pF@25V
-
Continuous Drain Current (Id):
420A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@8mA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.3mΩ@10V,60A
-
Package:
SOT-227
-
Manufacturer:
IXYS
-
Series:
GigaMOS™ HiPerFET™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
420A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 60A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 8mA
-
Gate Charge (Qg) (Max) @ Vgs:
670nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
47000pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
1070W (Tc)
-
Mounting Type:
Chassis Mount
-
Supplier Device Package:
SOT-227B
-
Package / Case:
SOT-227-4, miniBLOC
-
detail:
N-Channel 100V 420A (Tc) 1070W (Tc) Chassis Mount SOT-227B