دیتاشیت STB11NM60T4
مشخصات دیتاشیت
| نام دیتاشیت | ST(B,P)11NM60(FP,-1) |
|---|---|
| حجم فایل | 639.287 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 21 |
دانلود دیتاشیت ST(B,P)11NM60(FP,-1) |
ST(B,P)11NM60(FP,-1) Datasheet |
|---|
مشخصات
- Manufacturer: STMicroelectronics
- Series: MDmesh™
- Packaging: Cut Tape (CT)
- Part Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB11N
- detail: N-Channel 650V 11A (Tc) 160W (Tc) Surface Mount D2PAK
