STP20NM50FD دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
STP20NM50FD
|
|
حجم فایل
|
67.536
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
16
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STP20NM50FD
-
Operating Temperature:
-65°C~+150°C@(Tj)
-
Power Dissipation (Pd):
192W
-
Total Gate Charge (Qg@Vgs):
53nC@10V
-
Drain Source Voltage (Vdss):
500V
-
Input Capacitance (Ciss@Vds):
1380pF@25V
-
Continuous Drain Current (Id):
20A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
250mΩ@10A,10V
-
Package:
TO-220
-
Manufacturer:
STMicroelectronics
-
Series:
FDmesh™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
-
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
250mOhm @ 10A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
53nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
1380pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
192W (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220AB
-
Package / Case:
TO-220-3
-
Base Part Number:
STP20N
-
detail:
N-Channel 500V 20A (Tc) 192W (Tc) Through Hole TO-220AB
