دیتاشیت STW13NK60Z
مشخصات دیتاشیت
| نام دیتاشیت | STx13NK60Z(FP,T4) |
|---|---|
| حجم فایل | 501.06 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 18 |
دانلود دیتاشیت STx13NK60Z(FP,T4) |
STx13NK60Z(FP,T4) Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STW13NK60Z
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 150W
- Total Gate Charge (Qg@Vgs): 92nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 2030pF@25V
- Continuous Drain Current (Id): 13A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 550mΩ@10V,4.5A
- Package: TO-247
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
- Base Part Number: STW13N
- detail: N-Channel 600V 13A (Tc) 150W (Tc) Through Hole TO-247-3
