دیتاشیت STD12NF06LT4
مشخصات دیتاشیت
| نام دیتاشیت |
STD12NF06L(-1)
|
| حجم فایل |
676.567
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STD12NF06LT4
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Power Dissipation (Pd):
42.8W
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Drain Source Voltage (Vdss):
60V
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Continuous Drain Current (Id):
12A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
100mΩ@10V,6A
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Package:
TO-252-2(DPAK)
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Manufacturer:
STMicroelectronics
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Series:
STripFET™ II
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
100mOhm @ 6A, 10V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
10nC @ 5V
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Vgs (Max):
±16V
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Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
42.8W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
STD12
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detail:
N-Channel 60V 12A (Tc) 42.8W (Tc) Surface Mount DPAK
