دیتاشیت 2N3439
مشخصات دیتاشیت
| نام دیتاشیت |
2N3439, 2N3440
|
| حجم فایل |
46.42
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Microchip Tech 2N3439
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+200°C@(Tj)
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Collector Current (Ic):
1A
-
Power Dissipation (Pd):
800mW
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Transition Frequency (fT):
-
-
DC Current Gain (hFE@Ic,Vce):
40@20mA,10V
-
Collector Cut-Off Current (Icbo):
5uA
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Collector-Emitter Breakdown Voltage (Vceo):
350V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@50mA,4mA
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Package:
TO-39
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Manufacturer:
Microchip Tech
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Series:
-
-
Packaging:
Tray
-
Part Status:
Obsolete
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Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
350V
-
Vce Saturation (Max) @ Ib, Ic:
500mV @ 4mA, 50mA
-
Current - Collector Cutoff (Max):
20µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 20mA, 10V
-
Power - Max:
1W
-
Frequency - Transition:
15MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-205AD, TO-39-3 Metal Can
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Supplier Device Package:
TO-39
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Base Part Number:
2N34
-
detail:
Bipolar (BJT) Transistor NPN 350V 1A 15MHz 1W Through Hole TO-39
