دیتاشیت FQD11P06TM
مشخصات دیتاشیت
| نام دیتاشیت | FQD11P06, FQU11P06 |
|---|---|
| حجم فایل | 1376.4 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت FQD11P06, FQU11P06 |
FQD11P06, FQU11P06 Datasheet |
|---|
مشخصات
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FQD1
- detail: P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak
