دیتاشیت 2N6517
مشخصات دیتاشیت
| نام دیتاشیت |
2N6517
|
| حجم فایل |
55.834
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2N6517
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Package:
TO-92
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Series:
-
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Packaging:
Bulk
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Part Status:
Obsolete
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
500mA
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Voltage - Collector Emitter Breakdown (Max):
350V
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Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
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Current - Collector Cutoff (Max):
50nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
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Power - Max:
625mW
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Frequency - Transition:
200MHz
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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Supplier Device Package:
TO-92-3
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Base Part Number:
2N6517
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detail:
Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3
