دیتاشیت IXTQ460P2
مشخصات دیتاشیت
| نام دیتاشیت | IXTA,P,Q,H460P2 |
|---|---|
| حجم فایل | 160.029 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت IXTA,P,Q,H460P2 |
IXTA,P,Q,H460P2 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Littelfuse/IXYS IXTQ460P2
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 480W
- Total Gate Charge (Qg@Vgs): 48nC@10V
- Drain Source Voltage (Vdss): 500V
- Input Capacitance (Ciss@Vds): 2890pF@25V
- Continuous Drain Current (Id): 24A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 270mΩ@10V,12A
- Package: TO-3P-3
- Manufacturer: IXYS
- Series: PolarP2™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
