دیتاشیت STP30NF10
مشخصات دیتاشیت
| نام دیتاشیت | ST(B,P)30NF10(FP) |
|---|---|
| حجم فایل | 514.105 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 16 |
دانلود دیتاشیت ST(B,P)30NF10(FP) |
ST(B,P)30NF10(FP) Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP30NF10
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 115W
- Total Gate Charge (Qg@Vgs): 55nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 1180pF@25V
- Continuous Drain Current (Id): 35A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 45Ω@10V,15A
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: STripFET™ II
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: STP30N
- detail: N-Channel 100V 35A (Tc) 115W (Tc) Through Hole TO-220AB
