دیتاشیت HGTG11N120CND
مشخصات دیتاشیت
| نام دیتاشیت |
HGTG11N120CND
|
| حجم فایل |
235.422
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Type:
NPT
-
Category:
Triode/MOS Tube/Transistor/IGBTs
-
Datasheet:
onsemi HGTG11N120CND
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
43A
-
Power Dissipation (Pd):
298W
-
Input Capacitance (Cies@Vce):
-
-
Turn?on Switching Loss (Eon):
0.95mJ
-
Pulsed Collector Current (Icm):
80A
-
Turn?off Switching Loss (Eoff):
1.3mJ
-
Diode Reverse Recovery Time (Trr):
70ns
-
Collector-Emitter Breakdown Voltage (Vces):
1200V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
-
Package:
TO-247
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Not For New Designs
-
IGBT Type:
NPT
-
Voltage - Collector Emitter Breakdown (Max):
1200V
-
Current - Collector (Ic) (Max):
43A
-
Current - Collector Pulsed (Icm):
80A
-
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 11A
-
Power - Max:
298W
-
Switching Energy:
950µJ (on), 1.3mJ (off)
-
Input Type:
Standard
-
Gate Charge:
100nC
-
Td (on/off) @ 25°C:
23ns/180ns
-
Test Condition:
960V, 11A, 10Ohm, 15V
-
Reverse Recovery Time (trr):
70ns
-
Mounting Type:
Through Hole
-
Package / Case:
TO-247-3
-
Supplier Device Package:
TO-247-3
-
Base Part Number:
HGTG11N120
-
detail:
IGBT NPT 1200V 43A 298W Through Hole TO-247-3
