HGTG10N120BND دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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HGTG10N120BND
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حجم فایل
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236.19
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
-
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Packaging:
Tube
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Part Status:
Not For New Designs
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IGBT Type:
NPT
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Voltage - Collector Emitter Breakdown (Max):
1200V
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Current - Collector (Ic) (Max):
35A
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Current - Collector Pulsed (Icm):
80A
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Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
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Power - Max:
298W
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Switching Energy:
850µJ (on), 800µJ (off)
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Input Type:
Standard
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Gate Charge:
100nC
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Td (on/off) @ 25°C:
23ns/165ns
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Test Condition:
960V, 10A, 10Ohm, 15V
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Reverse Recovery Time (trr):
70ns
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247-3
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Base Part Number:
HGTG10N120
