دیتاشیت MTP2P50E
مشخصات دیتاشیت
| نام دیتاشیت |
MTP2P50E
|
| حجم فایل |
90.076
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
-
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
6Ohm @ 1A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1183pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
75W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220AB
-
Package / Case:
TO-220-3
-
Base Part Number:
MTP2P
-
detail:
P-Channel 500V 2A (Tc) 75W (Tc) Through Hole TO-220AB
