دیتاشیت STW45NM60
مشخصات دیتاشیت
| نام دیتاشیت |
STW45NM60
|
| حجم فایل |
326.824
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STW45NM60
-
Power Dissipation (Pd):
417W
-
Total Gate Charge (Qg@Vgs):
134nC@10V
-
Drain Source Voltage (Vdss):
650V
-
Input Capacitance (Ciss@Vds):
3800pF@25V
-
Continuous Drain Current (Id):
45A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
110mΩ@22.5A,10V
-
Package:
TO-247
-
Manufacturer:
STMicroelectronics
-
Series:
MDmesh™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
650V
-
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
110mOhm @ 22.5A, 10V
-
Vgs(th) (Max) @ Id:
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
134nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
3800pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
417W (Tc)
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-247-3
-
Package / Case:
TO-247-3
-
Base Part Number:
STW45N
-
detail:
N-Channel 650V 45A (Tc) 417W (Tc) Through Hole TO-247-3
