دیتاشیت CSD19533Q5A
مشخصات دیتاشیت
| نام دیتاشیت | CSD19533Q5A Datasheet |
|---|---|
| حجم فایل | 817.494 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 14 |
دانلود دیتاشیت CSD19533Q5A Datasheet |
CSD19533Q5A Datasheet Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Texas Instruments CSD19533Q5A
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 3.2W;96W
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 2670pF@50V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 3.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9.4mΩ@10V,13A
- Package: VSONP-8
- Manufacturer: Texas Instruments
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Series: NexFET™
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V
- Supplier Device Package: 8-VSONP (5x6)
- Vgs (Max): ±20V
- Mounting Type: Surface Mount
- Technology: MOSFET (Metal Oxide)
- Packaging: Cut Tape (CT)
- Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Base Part Number: CSD19533
- FET Type: N-Channel
- Package / Case: 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 50V
- Part Status: Active
