دیتاشیت MMBT5087
مشخصات دیتاشیت
نام دیتاشیت |
MMBT5087
|
حجم فایل |
67.583
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
2
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Shikues MMBT5087
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Transistor Type:
PNP
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
350mW
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Package:
SOT-23(TO-236)
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Manufacturer:
Shikues
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
50V
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Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
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Current - Collector Cutoff (Max):
10nA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100µA, 5V
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Power - Max:
350mW
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Frequency - Transition:
40MHz
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SOT-23-3
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Base Part Number:
MMBT5087