دیتاشیت TC6320TG-G
مشخصات دیتاشیت
| نام دیتاشیت |
TC6320
|
| حجم فایل |
827.403
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
-
RoHS:
true
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Type:
1PCSN-Channel&1PCSP-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech TC6320TG-G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
200V
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Input Capacitance (Ciss@Vds):
110pF@25V
-
Continuous Drain Current (Id):
2A
-
Gate Threshold Voltage (Vgs(th)@Id):
2V@1mA;2.4V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
7Ω@10V,1A;8Ω@10V,1A
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Package:
SOP-8
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Manufacturer:
Microchip Tech
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N and P-Channel
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FET Feature:
Standard
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Drain to Source Voltage (Vdss):
200V
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Current - Continuous Drain (Id) @ 25°C:
-
-
Rds On (Max) @ Id, Vgs:
7Ohm @ 1A, 10V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
-
-
Input Capacitance (Ciss) (Max) @ Vds:
110pF @ 25V
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Power - Max:
-
-
Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SOIC
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Base Part Number:
TC6320
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detail:
Mosfet Array N and P-Channel 200V Surface Mount 8-SOIC
