دیتاشیت FQN1N50CTA
مشخصات دیتاشیت
| نام دیتاشیت |
FQN1N50C
|
| حجم فایل |
1463.318
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FQN1N50CTA
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
890mW;2.08W
-
Total Gate Charge (Qg@Vgs):
6.4nC@10V
-
Drain Source Voltage (Vdss):
500V
-
Input Capacitance (Ciss@Vds):
195pF@25V
-
Continuous Drain Current (Id):
380mA
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6Ω@190mA,10V
-
Package:
TO-92-3
-
Manufacturer:
onsemi
-
Series:
QFET®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
-
Current - Continuous Drain (Id) @ 25°C:
380mA (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
6Ohm @ 190mA, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
195pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
890mW (Ta), 2.08W (Tc)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-92-3
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
-
Base Part Number:
FQN1
-
detail:
N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3
