دیتاشیت IXFH20N100P
مشخصات دیتاشیت
| نام دیتاشیت | IXF(H,T)20N100P |
|---|---|
| حجم فایل | 124.362 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت IXF(H,T)20N100P |
IXF(H,T)20N100P Datasheet |
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مشخصات
- Manufacturer: IXYS
- Series: HiPerFET™, PolarP2™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
- detail: N-Channel 1000V 20A (Tc) 660W (Tc) Through Hole TO-247AD (IXFH)
