دیتاشیت IXFN21N100Q
مشخصات دیتاشیت
| نام دیتاشیت |
IXFN21N100Q
|
| حجم فایل |
205.305
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
HiPerFET™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
1000V
-
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
500mOhm @ 500mA, 10V
-
Vgs(th) (Max) @ Id:
5V @ 4mA
-
Gate Charge (Qg) (Max) @ Vgs:
170nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
5900pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
520W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Chassis Mount
-
Supplier Device Package:
SOT-227B
-
Package / Case:
SOT-227-4, miniBLOC
