ST901T Datasheet
Datasheet specifications
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Datasheet's name
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ST901T
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File size
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49.37
KB
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File type
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pdf
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Number of pages
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12
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Technical specifications
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
STMicroelectronics ST901T
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Transistor Type:
NPN
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Collector Current (Ic):
4A
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Power Dissipation (Pd):
100W
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DC current gain (hFE@Vce,Ic):
1800@2A,2V
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Collector-emitter voltage (Vceo):
350V
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Collector cut-off current (Icbo@Vcb):
100uA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
2V@20mA,2A
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Package:
TO-220
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Manufacturer:
STMicroelectronics
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
4A
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Voltage - Collector Emitter Breakdown (Max):
350V
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Vce Saturation (Max) @ Ib, Ic:
2V @ 20mA, 2A
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Current - Collector Cutoff (Max):
100µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
1800 @ 2A, 2V
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Power - Max:
100W
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Frequency - Transition:
-
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220AB
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Base Part Number:
ST901
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detail:
Bipolar (BJT) Transistor NPN - Darlington 350V 4A 100W Through Hole TO-220AB
