دیتاشیت STB160N75F3
مشخصات دیتاشیت
| نام دیتاشیت |
STx160N75F3
|
| حجم فایل |
396.681
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
16
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STB160N75F3
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
330W
-
Total Gate Charge (Qg@Vgs):
85nC@10V
-
Drain Source Voltage (Vdss):
75V
-
Input Capacitance (Ciss@Vds):
6750pF@25V
-
Continuous Drain Current (Id):
120A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
4mΩ@10V,60A
-
Package:
D2PAK
-
Manufacturer:
STMicroelectronics
-
Series:
STripFET™
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
75V
-
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
4mOhm @ 60A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
6750pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
330W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D2PAK
-
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
Base Part Number:
STB160N
-
detail:
N-Channel 75V 120A (Tc) 330W (Tc) Surface Mount D2PAK
