دیتاشیت HGTG40N60B3
مشخصات دیتاشیت
| نام دیتاشیت |
HGTG40N60B3
|
| حجم فایل |
70.883
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Operating Temperature:
55°C~+150°C@(Tj)
-
Collector Current (Ic):
70A
-
Power Dissipation (Pd):
290W
-
Turn?on Delay Time (Td(on)):
47ns
-
Turn?on Switching Loss (Eon):
1.05mJ
-
Total Gate Charge (Qg@Ic,Vge):
250nC
-
Turn?off Delay Time (Td(off)):
170ns
-
Pulsed Collector Current (Icm):
330A
-
Collector-Emitter Breakdown Voltage (Vces):
600V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2V@15V,40A
-
Package:
TO-247
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Not For New Designs
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IGBT Type:
-
-
Voltage - Collector Emitter Breakdown (Max):
600V
-
Current - Collector (Ic) (Max):
70A
-
Current - Collector Pulsed (Icm):
330A
-
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 40A
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Power - Max:
290W
-
Switching Energy:
1.05mJ (on), 800µJ (off)
-
Input Type:
Standard
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Gate Charge:
250nC
-
Td (on/off) @ 25°C:
47ns/170ns
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Test Condition:
480V, 40A, 3Ohm, 15V
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Mounting Type:
Through Hole
-
Package / Case:
TO-247-3
-
Supplier Device Package:
TO-247-3
-
Base Part Number:
HGTG40N60
-
detail:
IGBT 600V 70A 290W Through Hole TO-247-3
