دیتاشیت FDV303N
مشخصات دیتاشیت
| نام دیتاشیت |
FDV303N
|
| حجم فایل |
268.19
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDV303N
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
350mW
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Total Gate Charge (Qg@Vgs):
2.3nC@4.5V
-
Drain Source Voltage (Vdss):
25V
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Input Capacitance (Ciss@Vds):
50pF@10V
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Continuous Drain Current (Id):
680mA
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Gate Threshold Voltage (Vgs(th)@Id):
1.5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
450mΩ@4.5V,500mA
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Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
25V
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Current - Continuous Drain (Id) @ 25°C:
680mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
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Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
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Vgs(th) (Max) @ Id:
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
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Vgs (Max):
±8V
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Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
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FET Feature:
-
-
Power Dissipation (Max):
350mW (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-23
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
FDV30
