دیتاشیت FDV303N
مشخصات دیتاشیت
نام دیتاشیت |
FDV303N
|
حجم فایل |
268.19
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
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Manufacturer:
ON Semiconductor
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
25V
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Current - Continuous Drain (Id) @ 25°C:
680mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
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Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
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Vgs(th) (Max) @ Id:
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
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Vgs (Max):
±8V
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Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
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FET Feature:
-
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Power Dissipation (Max):
350mW (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-23
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
FDV30