دیتاشیت FDC6305N
مشخصات دیتاشیت
نام دیتاشیت |
FDC6305N
|
حجم فایل |
70.016
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
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RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDC6305N
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Power Dissipation (Pd):
700mW
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Drain Source Voltage (Vdss):
20V
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Continuous Drain Current (Id):
2.7A
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Gate Threshold Voltage (Vgs(th)@Id):
1.5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
80mΩ@4.5V,2.7A
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Package:
TSOT-23-6
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Standard
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Drain to Source Voltage (Vdss):
20V
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Current - Continuous Drain (Id) @ 25°C:
2.7A
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Rds On (Max) @ Id, Vgs:
80mOhm @ 2.7A, 4.5V
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Vgs(th) (Max) @ Id:
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
5nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
310pF @ 10V
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Power - Max:
700mW
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
SOT-23-6 Thin, TSOT-23-6
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Supplier Device Package:
SuperSOT™-6
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Base Part Number:
FDC6305