CSD18504Q5A Datasheet دیتاشیت

CSD18504Q5A Datasheet

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تعداد صفحات 13

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CSD18504Q5A 13 pages

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  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD18504Q5A
  • Power Dissipation (Pd): 3.1W
  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 15A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.6mΩ@10V,17A
  • Package: DFN-8(5x6)
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds: 1656pF @ 20V
  • Vgs (Max): ±20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Supplier Device Package: 8-VSONP (5x6)
  • Packaging: Cut Tape (CT)
  • Mounting Type: Surface Mount
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Base Part Number: CSD1850
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Package / Case: 8-PowerTDFN
  • Part Status: Active
  • Series: NexFET™
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
  • Drain to Source Voltage (Vdss): 40V