دیتاشیت FQPF10N60C
مشخصات دیتاشیت
نام دیتاشیت | FQP10N60C, FQPF10N60C |
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حجم فایل | 1505.852 کیلوبایت |
نوع فایل | |
تعداد صفحات | 12 |
دانلود دیتاشیت FQP10N60C, FQPF10N60C |
FQP10N60C, FQPF10N60C Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Tube
- Part Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
- Base Part Number: FQPF1