FDS9435A 数据手册
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FDS9435A 5 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDS9435A
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 2.5W
- Total Gate Charge (Qg@Vgs): 14nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 528pF@15V
- Continuous Drain Current (Id): 5.3A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,5.3A
- Package: SOP-8
- Manufacturer: onsemi
- Series: PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Base Part Number: FDS94
- detail: P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC