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- دیتاشیت 2N2905A
دیتاشیت 2N2905A
مشخصات دیتاشیت
| نام دیتاشیت | 2N2905A |
|---|---|
| حجم فایل | 101.224 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
2N2905A |
دانلود دیتاشیت |
|---|
سایر مستندات
2N290(5,7)A 7 pages
2N2905A 2 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Microchip Tech 2N2905A
- Transistor Type: PNP
- Operating Temperature: -65°C~+200°C@(Tj)
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 800mW
- Transition Frequency (fT): -
- DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.6V@500mA,50mA
- Package: TO-39
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Tube
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 600mW
- Frequency - Transition: 200MHz
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
- Base Part Number: 2N29
- detail: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 600mW Through Hole TO-39