دیتاشیت MMBT2222A

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دانلود دیتاشیت MMBT2222A Datasheet	MMBT2222A Datasheet Datasheet

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Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: Foshan Blue Rocket Elec MMBT2222A
Transistor Type: NPN
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 600mA
Power Dissipation (Pd): 350mW
Transition Frequency (fT): 300MHz
DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
Collector Cut-Off Current (Icbo): 10nA
Collector-Emitter Breakdown Voltage (Vceo): 40V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@500mA,50mA
Package: SOT-23(TO-236)
Manufacturer: Foshan Blue Rocket Elec
Series: -
Packaging: Cut Tape (CT)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350mW
Frequency - Transition: 270MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBT
detail: Bipolar (BJT) Transistor NPN 40V 600mA 270MHz 350mW Surface Mount SOT-23-3