دیتاشیت BD681

مشخصات دیتاشیت

دانلود دیتاشیت BD675(A),77(A),79(A),81	BD675(A),77(A),79(A),81 Datasheet

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Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: STMicroelectronics BD681
Transistor Type: NPN
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 4A
Power Dissipation (Pd): 40W
Transition frequency (fT): -
DC current gain (hFE@Vce,Ic): 750@3V,1.5A
Collector-emitter voltage (Vceo): 100V
Collector cut-off current (Icbo@Vcb): 200uA@100V
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@1.5V,30mA
Package: SOT-32
Manufacturer: STMicroelectronics
Series: -
Packaging: Bulk
Part Status: Obsolete
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: -
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD681
detail: Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-225AA