دیتاشیت ULN2003AN

ULx200xA(I)

مشخصات دیتاشیت

نام دیتاشیت ULx200xA(I)
حجم فایل 1414.085 کیلوبایت
نوع فایل pdf
تعداد صفحات 34

دانلود دیتاشیت ULx200xA(I)

ULx200xA(I) Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Darlington Transistor Arrays
  • Datasheet: HTC Korea TAEJIN Tech ULN2003AN
  • Input current (Ii@Vi): 1.35mA@3.85V
  • Operating Temperature: -40°C~+85°C
  • Input Capacitance (Ci): -
  • Output leakage current (Icex@Vce): 50uA@50V
  • Clamp Diode Forward Voltage (VF@IF): 1.7V@350mA
  • Clamp Diode Leakage Current (IR@VR): 50uA@50V
  • ON-state input voltage(VI(on)@Vce,Ic): 3V@2V,300mA
  • Off-state input current (Ii(off)@Vce,Ic): 65uA@50V,500uA
  • Collector-emitter saturation voltage (VCE(sat)@Ii,Ic): 1.2V@500uA,350mA
  • Package: DIP-16
  • Manufacturer: HTC Korea TAEJIN Tech
  • Series: Automotive, AEC-Q100
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Current - Collector Cutoff (Max): 50µA
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Supplier Device Package: 16-PDIP
  • Mounting Type: Through Hole
  • Base Part Number: ULN2003
  • Frequency - Transition: -
  • Current - Collector (Ic) (Max): 500mA
  • Packaging: Tube
  • Transistor Type: 7 NPN Darlington
  • Power - Max: -
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Part Status: Active

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