FQPF2N60C دیتاشیت

FQPF2N60C

مشخصات دیتاشیت

نام دیتاشیت FQPF2N60C
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

دانلود دیتاشیت FQPF2N60C

دانلود دیتاشیت

سایر مستندات

FQP2N60C, FQPF2N60C 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQPF2N60C
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 23W
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 235pF@25V
  • Continuous Drain Current (Id): 2A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7Ω@10V,1A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 23W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FQPF2

محصولات مشابه