BDX34C 数据手册
其他文档
BDX3xx 4 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Transistor Type: NPN
- Collector Current (Ic): 10A
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Package: TO-220
- Manufacturer: SPTECH
- Datasheet: STMicroelectronics BDX33C
- Operating Temperature: +150°C@(Tj)
- Power Dissipation (Pd): 70W
- Transition frequency (fT): -
- DC current gain (hFE@Vce,Ic): 750@3V,3A
- Collector-emitter voltage (Vceo): 100V
- Collector cut-off current (Icbo@Vcb): 500uA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@3A,6mA
- Series: -
- Packaging: Tube
- Part Status: Active
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 70W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Base Part Number: BDX33
- detail: Bipolar (BJT) Transistor NPN - Darlington 100V 10A 70W Through Hole TO-220AB