دیتاشیت 2N7000
مشخصات دیتاشیت
| نام دیتاشیت | 2N7000, 2N7002, NDS7002A |
|---|---|
| حجم فایل | 775.328 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
دانلود دیتاشیت 2N7000, 2N7002, NDS7002A |
2N7000, 2N7002, NDS7002A Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2N7000
- Power Dissipation (Pd): 400mW
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 200mA
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@10V,500mA
- Package: TO-92
- Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.
- Series: -
- Packaging: Bulk
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number: 2N7000
