FQP50N06 دیتاشیت

FQP50N06

مشخصات دیتاشیت

نام دیتاشیت FQP50N06
حجم فایل 63.418 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت FQP50N06

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

FQP50N06 10 pages

FQP50N06 6 pages

FQP50N06 8 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: JSMSEMI FQP50N06
  • Package: TO-220
  • Manufacturer: JSMSEMI
  • Type: N Channel
  • Power Dissipation (Pd): 120W
  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 50A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,25A
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FQP5

محصولات مشابه