دیتاشیت BC557B
مشخصات دیتاشیت
| نام دیتاشیت |
BC556-60
|
| حجم فایل |
357.799
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
LGE BC557B
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
625mW
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Transition Frequency (fT):
150MHz
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DC Current Gain (hFE@Ic,Vce):
180@2mA,5V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
650mV@100mA,5mA
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Package:
TO-92-3
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Manufacturer:
LGE
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Series:
-
-
Packaging:
Bulk
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
100mA
-
Voltage - Collector Emitter Breakdown (Max):
45V
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Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
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Current - Collector Cutoff (Max):
100nA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 2mA, 5V
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Power - Max:
625mW
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Frequency - Transition:
320MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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Supplier Device Package:
TO-92-3
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Base Part Number:
BC557
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detail:
Bipolar (BJT) Transistor PNP 45V 100mA 320MHz 625mW Through Hole TO-92-3
