FQA140N10 数据手册
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FQA140N10 10 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQA140N10
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 375W
- Total Gate Charge (Qg@Vgs): 285nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 7900pF@25V
- Continuous Drain Current (Id): 140A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,70A
- Package: TO-3P
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
- Base Part Number: FQA1